Samsung is announcing an 800GB SSD, designated as the SZ985 Z-SSD™, geared toward the most advanced enterprise applications. This includes the rapidly growing fields of Artificial Intelligence (AI), Internet of Things (IoT) and supercomputing. The 800GB Z-SSD was developed in 2017, providing the most efficient storage solution for these type of applications, as well as those that utilize high-speed data caching and/or log data processing.
Samsung’s latest, a single port, four-lane Z-SSD features Z-NAND chips that offer 10 X the cell read performance of 3-bit V-NAND chips. The Z-SSD also utilizes a 1.5GB LPDDR4 DRAM chip and a high-performance controller to generate 1.7 X the random read performance (up to 750,000 IOPS!) and 5 X less write latency (16µs) than the 3-bit V-NAND NVMe SSD PM963. The Z-SSD also provides random write speeds of up to 170,000 IOPS.
According to Jinman Han, Samsung’s senior vice president of Memory Product Planning & Application Engineering, “With our leading-edge 800GB Z-SSD, we expect to contribute significantly to market introductions of next-generation supercomputing systems in the near future, enabling improved IT investment efficiency and exceptional performance. We will continue to develop next-generation Z-SSDs with higher density and greater product competitiveness, in order to lead the industry in accelerating growth of the premium SSD market.”
The 800GB Z-SSD offers high reliability, guaranteeing up to 30 drive writes per day (DWPD) for five years, totaling 42 petabytes. This is the equivalent of storing a total of nearly 8.4 million 5GB-sized full-HD movies during a five-year period. This is further underscored by the Z-SSD’s mean time between failures (MTBF) of 2,000,000 hours.
Samsung will be introducing the new Z-SSD in both 240GB and 800GB models, as well as related technologies at the International Solid-State Circuits Conference (ISSCC 2018) in San Francisco from February 11th through February 15th.