Everspin Announces Sampling of Industry’s First 256Mb Perpendicular Spin Torque MRAM to Customers

Everspin Technologies, the leading producer of MRAM technology and devices, is announcing that they have begun shipping the world’s first product utilizing perpendicular Magnetic Tunnel Junction (pMTJ)-based ST-MRAM  to customers.  Their 256Mb DDR3 product is the highest density commercially available perpendicular ST-MRAM in the market.

EMD3D256M_pMTJ ST-MRAMEverspin’s successes now extend to its third generation MRAM technology, and they are preparing for production of their next ST-MRAM product, which will offer improved performance, lower power consumption, higher endurance, and better scalability than previous products.  Everspin’s newest ST-MRAM utilizes a well-established and proven DDR3 interface that is compatible with DDR3 controllers used in FPGAs and ASIC designs, as well as SSD and RAID controller products.  It is easily incorporated into high-performance systems requiring power safe reliability to secure critical data in cloud computing and enterprise systems.

Everspin-MRAM-Die-Closeup-1typical Everspin MRAM die closeup

Customers who require both non-volatility and DRAM speeds can incorporate Everspin’s ST-MRAM to improve system reliability while simplifying system design.  Everspin’s ST-MRAM eliminates the need for supercapacitors or battery packs that are being utilized in today’s system designs to protect critical data in the event of an unanticipated power interruption.  Usage scenarios such as enterprise-class SSDs, RAID systems, servers and storage appliances can all benefit from the persistent data protection and high cycle-endurance of Everspin’s ST-MRAM offerings.  Everspin’s ST-MRAM enables hot data to be written faster than any other non-volatile memory in the market, yet still ensures data integrity.  To assist with customer designs, Everspin built an ecosystem that includes DDR3 memory controller IP and SSD controller IP from various vendors, as well as FPGA-specific tools to test and validate the 256Mb DDR3 pMTJ ST-MRAM.

Everspin-MRAM-Wafter-Colorized-3typical Everspin MRAM wafer closeup

According to Phill LoPresti, CEO of Everspin, “By implementing our patented perpendicular MTJ technology in a 256Mb ST-MRAM commercial product, we have solidified our leadership position as the provider of the fastest non-volatile products to our customers.  By working closely with out partner, GLOBALFOUNDRIES, we brought up the MRAM technology faster than planned on their 300mm line, achieving our target yield and product performance objectives.  Everspin and GLOBALFOUNDRIES are now focused on the successful production ramp of the 256Mb MRAM.  Everspin has consistently demonstrated the unique ability to bring the latest in MRAM technology into production — from our first generation field-switched products to our in-plane MTJ-based 64Mb, and now our perpendicular MTJ 256Mb.  The successful launch of our pMTJ process in our 256Mb device adds confidence in our ability to scale to higher density products such as our 1Gb in development.  Everspin is bringing MRAM to the mainstream.”

Everspin’s pMTJ-based ST-MRAM products will allow them to provide solutions for the multi-billion dollar persistent memory market.  Server and storage OEMs have been evaluating Everspin’s ST-MRAM products, and intend to utilize these higher-density devices.  Everspin has a 1Gb DDR4 ST-MRAM product under development, basing it on a scaled-down version of their 256Mb pMTJ.

Everspin logoEverspin’s latest ST-MRAM featuring pMTJ provides the following advantages:

  • Supports over 100,00 x faster writes speeds than NAND flash
  • Persistent data retention that satisfies the needs of many cloud computing and enterprise applications
  • DDR3 interface compatibility with symmetrical read and write speeds
  • Provides the highest endurance of currently available non-volatile memories
  • No wear-leveling required
  • Compatible with standard CMOS and is scalable to Gigabit + densities

Everspin will showcase their new 256Mb DDR3 pMTJ ST-MRAM at the Flash Memory Summit in Santa Clara, CA from 8/9 through 8/11.  Their demonstration will utilize a PCIe NVMe SSD attaining write performance of an unprecedented 1.5 million IOPS, made possible with Everspin’s latest ST-MRAM.  You can view the Everspin press release in its entirety here.

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