SanDisk Corporation, world-leading flash memory storage solutions provider, is announcing that it has begun customer sampling of their industry-leading 1Ynm process technology for flash memory products. This represents SanDisk’s second generation of 19nm (or smaller) manufacturing technology.
SanDisk’s latest breakthrough achievement reduces the memory cell size from 19nm X 26nm to 19nm X 19.5nm, resulting in a 25% reduction of the memory cell area. This allows SanDisk to continue to forge ahead in leading the industry in producing smaller and more powerful flash memory products.
SanDisk will be featuring its most sophisticated memory technology node so far in the second-generation 19nm memory die. SanDisk’s All-Bit-Line (ABL) architecture, utilizing proprietary programming algorithms and multi-level data storage management techniques, will result in multi-level cell (MLC) NAND flash memory chips that retain full performance and reliability. Also, SanDisk’s three bits per cell X3 technology will be implemented on the second-generation 19nm node, yielding the lowest-cost flash solutions to enable growing end-markets for flash memory solutions.
This latest circuitry miniaturization breakthrough SanDisk is utilizing in flash memory chips allows for higher-capacity products, along with lowered manufacturing costs when creating SanDisk flash memory solutions. Businesses and consumers both will see benefits from this new advanced manufacturing technology by having access to higher-capacity and smaller-sized SanDisk flash memory chips to utilize in mobile phones, tablets, SSDs (for both enterprise and client market segments), and consumer products.
The SanDisk press release for the second-generation 19nm process technology can be viewed here.