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Samsung Electronics Co. Ltd., A global force in NAND technology, is announcing mass production of a 128Gb, 3-bit multi-level-cell (MLC) NAND chip. Now breaking the 20nm barrier, this new architecture is classified as 10 nanometer (nm)-class process technology. These advanced, high density memory chips will enable even larger capacities for embedded NAND storage, and especially for solid state drives (SSDs). …
Read More »Samsung Begins Mass Producing 128GBPS MLC NAND Chips Using Sub-20 nm Architecture
