Toshiba Building New Fab Facility at Yokkaichi (Japan) to Expand 3D Flash Memory Production Capacity

Toshiba is announcing their outline schedule for constructing a new state-of-the-art fabrication facility at their Yakkaichi Operations in Mie, Japan.  The new fab will be geared toward expanding production of Toshiba’s proprietary 3D Flash memory, also known as BiCS FLASH™.

toshiba-bics-3d-nand-banner-2Toshiba had announced their intention to build a new BiCS FLASH™ facility back in March of this year, and they are now scheduled to begin construction in February of 2017.  As with Toshiba’s Fab 5, construction in planned to consist of two phases, with completion of the first phase anticipated for the summer of 2018.  This will allow Toshiba to optimize the pace of investments against market trends.  Any decisions concerning the new facility’s overall capacity and equipment investments, commencement of production, production capacity and plans will be a reflection of market trends.

toshiba-bics-3d-nand-layers-banner-2Toshiba also is planning construction of a “Memory R & D Center” adjacent to the new fab facility.  Moving research and development activities, which are currently carried out in different locations, to adjacent facilities will promote accelerated development of flash memories.  Toshiba is partnered with Western Digital, who is also investing in the new facilities.

toshiba-3d-nand-512gbToshiba’s new fab facility will feature a quake-absorbing structure, as well as an environmentally friendly design that includes the latest energy-efficient manufacturing equipment and LED lighting throughout the building.  The new fab will also utilize artificial intelligence (AI) in advanced production systems that will boost productivity.

toshiba-3d-nand-server-roomThe new facilities will help Toshiba to increase its competitiveness, and expand its memory business with timely and market-responsive investments.  The new Yakkaichi facilities will also allow for further development of Toshiba’s BiCS FLASH™, as well as new generations of memory.

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